The IR-Si272 is designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a silicon carbide material. The advanced technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength. When operated at 6 volts/30 watts the IR-Si272 reaches 1160°C.
The IR-Si272-P-1 emitters can be optionally mounted in a 1 inch parabolic reflector for extremely efficient collimation of energy. The IR-Si272-E-1 emitters are mounted in a 1 inch elliptical reflector with an external focal point that is 1/2 inch in front of the clear aperture.
Select above either no optics or the P-1 or E-1 optics when purchasing.
Also see the Universal Photon Source (UPS) Driver Board as an accessory to your emitter.
| IR-Si272 | |
| Temperature (C) | 1160 |
| Volts (V) | 6.0 V |
| Current (A) | 5.0 |
| Power (W) | 30 |
| Active Area (mm) | 2.8 (D) x 5 (L) |
| Lifetime (typical) | >5,000 hrs. @ 6 V |
