The IR-Si217 Series is designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a silicon carbide material. The advanced technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength. When operated at 24 volts/37watts the IR-Si217 reaches 1385°C.
The IR-Si217-P-1 emitters are mounted in a 1 inch parabolic reflector for extremely efficient collimation of energy. The IR-Si217-E-1 emitters are mounted in a 1 inch elliptical reflector with an external focal point that is 1/2 inch in front of the clear aperture.
Select above either the optional P-1 or E-1 optics when purchasing.
Also see the Universal Photon Source (UPS) Driver Board as an accessory to your emitter.
| IR-Si217 | |
| Temperature (C) | 1385 |
| Volts (V) | 24.0 V (AC or DC) |
| Current (A) | 1.5 |
| Power (W) | 37 |
| Active Area (mm) | 6.0 w x 4.4 l |
| Lifetime (typical) | >5,000 hrs. @ 24V |
