The IR-Si295 is designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a silicon nitride material. The advanced technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength. When operated at 12 volts/40 watts the IR-Si295 reaches 1200°C.
The IR-Si295-P-2 emitters can be optionally mounted in a 2 inch parabolic reflector for extremely efficient collimation of energy. The IR-Si295-E-2 emitters are mounted in a 2 inch elliptical reflector with an external focal point 1 inch in front of the clear aperture of the reflector.
Select above either no optics or the P-2 or E-2 optics when purchasing.
Also see the Universal Photon Source (UPS) Driver Board as an accessory to your emitter.
| IR-Si295 | |
| Temperature (C) | 1200 |
| Volts (V) | 12.0 V |
| Current (A) | 3.3 |
| Power (W) | 40 |
| Active Area (mm) | 3.5 (D) x 12 (L) |
| Lifetime (typical) | >5,000 hrs. @ 12 V |
